JRP03N08, the N-channel Enhanced PowerMOSFETs, is obtained by advanced double trench technology whh reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.
JRP03N08, the N-channel Enhanced PowerMOSFETs, is obtained by advanced double trench technology whh reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.
| Parameter | Value | Unit |
| VDSS | 85 | V |
| ID | 180 | A |
| RDS(on).typ | 2.3 | mΩ |
